2SJ204_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
■ Features
● VDS (V) =-30V
● ID =-200m A
● RDS(ON) ＜ 8Ω (VGS =-10V)
● RDS(ON) ＜ 13Ω (VGS =-4V)
● Compementary to 2SK1582
P-Channel MOSFET
2SJ204
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-30
V
VGS
±20
Continuous Drain Current
Pulsed Drain Current (Note.1)
ID
-200
mA
IDM
-400
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
Operating Temperature
Topt
-55 to 80
℃
Junction Storage Temperature Range
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain-Source Breakdown Voltage
VDSS ID=-250μA, VGS=0V
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V, VGS=0V
-1 uA
Gate-Body leakage current
IGSS
VDS=0V, VGS=±20V
±1 uA
Gate Cut off Voltage
VGS(off) VDS=-5V,ID=-1uA
-1.4
-2.4 V
Static Drain-Source On-Resistance
RDS(On)
VGS=-4V, ID=-10mA
VGS=-10V, ID=-10mA
13
Ω
8
Forward Transconductance
gFS
VDS=-5V, ID=-10mA
20
mS
Input Capacitance
Ciss
27
Output Capacitance
Coss
VGS=0V, VDS=-10V, f=1MHz
27
pF
Reverse Transfer Capacitance
Crss
6
Turn-On DelayTime
td(on)
120
Turn-On Rise Time
Turn-Off DelayTime
tr
td(off)
VGS(on)=-4V, VDS=-5V, ID=-0.3A,
RL=1.5Ω,RGEN=10Ω
240
ns
135
Turn-Off Fall Time
tf
210
■ Marking
Marking
H15
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