2SJ203_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
■ Features
● VDS (V) =-16V
● ID =-200m A
● RDS(ON) ＜ 23Ω (VGS =-2.5V)
● RDS(ON) ＜ 10Ω (VGS =-4V)
P-Channel MOSFET
2SJ203
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-16
V
VGS
±7
Continuous Drain Current
Pulsed Drain Current (Note.1)
ID
-200
mA
IDM
-400
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
Operating Temperature
Topt
-55 to 80
℃
Junction Storage Temperature Range
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain-Source Breakdown Voltage
VDSS ID=-250μA, VGS=0V
-16
V
Zero Gate Voltage Drain Current
IDSS
VDS=-16V, VGS=0V
-1 uA
Gate-Body leakage current
IGSS
VDS=0V, VGS=±3V
±10 uA
Gate Cut off Voltage
VGS(off) VDS=-3V,ID=-1uA
-1.2
-2.2 V
Static Drain-Source On-Resistance
RDS(On)
VGS=-2.5V, ID=-1mA
VGS=-4V, ID=-1mA
23
Ω
10
Forward Transconductance
gFS
VDS=-3V, ID=-10mA
20 48
mS
Input Capacitance
Output Capacitance
Ciss
Coss
VGS=0V, VDS=-3V, f=1MHz
28
32
pF
Reverse Transfer Capacitance
Crss
6
Turn-On DelayTime
td(on)
180
Turn-On Rise Time
Turn-Off DelayTime
tr
td(off)
VGS(on)=-3V, VDS=-3V, ID=-10mA,
RL=300Ω,RGEN=10Ω
420
ns
100
Turn-Off Fall Time
tf
200
■ Marking
Marking
H14
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