2SJ197_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ197
MOSFET
■ Features
● VDS (V) =-60V
● ID =-1.5 A
● RDS(ON) ＜ 1Ω (VGS =-10V)
● RDS(ON) ＜ 1.5Ω (VGS =-4V)
● Comp;ementary to 2SK1483
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Symbol
Rating
Unit
VDS
-60
V
VGS
±20
ID
1.5
A
IDM
3
PD
2
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Cut off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
Min
VDSS ID=-250μA, VGS=0V
-60
IDSS
VDS=-60V, VGS=0V
IGSS
VDS=0V, VGS=±20V
VGS(off) VDS=-10V,ID=-1mA
-1
RDS(On)
VGS=-10V, ID=-0.5A
VGS=-4V, ID=-0.5A
gFS
VGS=-10V, ID=-0.5A
0.4
Ciss
Coss
VGS=0V, VDS=-10V, f=1MHz
Crss
td(on)
tr
td(off)
VGS(on)=-10V, VDS=-25V, ID=-0.5A,
RL=50Ω,RGEN=10Ω
tf
Typ Max Unit
V
-10 uA
±10 uA
-3
V
1.5
Ω
1
1
S
220
125
pF
17
45
70
ns
380
170
■ Marking
Marking
PB
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