2SJ185-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
2SJ185
■ Features
● VDS (V) =-50V
● ID =-0.1 A (VGS =-4V)
● RDS(ON) ＜ 20Ω (VGS =-4V)
● RDS(ON) ＜ 40Ω (VGS =-2.5V)
● Comp;ementary to 2SK1399
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-50
V
VGS
±7
Continuous Drain Current
Pulsed Drain Current (Note.1)
ID
-100
mA
IDM
-200
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
Operating Temperature
Topt
-55 to 80
℃
Junction Storage Temperature Range
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
Gate Cut off Voltage
VGS(off)
Static Drain-Source On-Resistance
RDS(On)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-50V, VGS=0V
VDS=0V, VGS=±7V
VDS=-3V,ID=-1uA
VGS=-2.5V, ID=-1mA
VGS=-4V, ID=-10mA
VDS=-3V, ID=-10mA
VGS=0V, VDS=-3V, f=1MHz
VGS(on)=-3V, VDS=-3V, ID=-20mA,
RL=150Ω,RGEN=10Ω
Min Typ Max Unit
-50
V
-10 uA
±5 uA
-1.2
-2
V
40
Ω
20
20 42
mS
22
12
pF
4
80
230
ns
40
70
■ Marking
Marking
H12
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