2SJ181S_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
2SJ181S
■ Features
● VDS (V) =-600V
● ID =-0.5 A (VGS =-10V)
● RDS(ON) ＜ 25Ω (VGS =-10V)
D
● High speed switching
● Low drive current
G
S
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
4
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Unit: mm
1 Gate
2 Drain
3 Source
4 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Body to Drain Diode Reverse Drain Current
Power Dissipation
Tc = 25℃
Junction Temperature
Junction Storage Temperature Range
Symbol
Rating
Unit
VDS
-600
V
VGS
±15
ID
-0.5
IDM
-1
A
IDR
-0.5
PD
20
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 us, duty cycle ≤ 1%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Gate to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Diode Forward Voltage
Symbol
VDSS
VGSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
trr
VSD
Test Conditions
ID= -10mA, VGS=0V
IG=±100μA, VDS=0V
VDS=-500V, VGS=0V
VDS=0V, VGS=±12V
VGS=-10V ID=-1mA
VGS=-10V, ID=-0.3A
VDS=-20V, ID=-0.3A
VGS=0V, VDS=-10V, f=1MHz
VGS=-10V, ID=-0.3A, RL=100Ω
IF=-0.5A, VGS=0,dI/dt=50A/μs
IS=-0.5A,VGS=0V
Min Typ Max Unit
-600
V
±15
-100 uA
±10 uA
-2
-4
V
25 Ω
0.3 0.45
S
220
55
pF
13
7
20
35
ns
35
230
-0.85
V
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