2SJ181S Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOS FET For High-Speed Switching

SMD Type
P-Channel MOS FET
For High-Speed Switching
2SJ181S
MOSFET
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current *
Channel dissipation (Tc=25 )
Channel temperature
Storage temperature
* PW 10 ìs, duty cycle 1%
Symbol
Rating
Unit
VDSS
-600
V
VGSS
15
V
ID(DS)
-0.5
A
ID(pulse)
-1
A
Pch
20
W
Tch
150
Tstg
-55 to +150
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