2SJ166-3 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
■ Features
● VDS (V) =-50V
● ID =-0.1 A (VGS =-10V)
● RDS(ON) ＜ 50Ω (VGS =-4V)
● Comp;ementary to 2SK1132
P-Channel MOSFET
2SJ166
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Symbol
Rating
Unit
VDS
-50
V
VGS
±7
ID
-100
mA
IDM
-200
PD
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Cut off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-50V, VGS=0V
VDS=0V, VGS=±7V
VDS=-5V, ID=-1uA
VGS=-4V, ID=-20mA
VDS=-5V, ID=-20mA
VGS=0V, VDS=-5V, f=1MHz
VGS(on)=-5V, VDS=-5V, ID=-20mA,
RL=250Ω,RGEN=10Ω
Min Typ Max Unit
-50
V
-10 uA
±1 uA
-1
-3
V
50 Ω
30 50
mS
18
11
pF
3
40
58
ns
62
62
■ Marking
Marking
H11
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