2SJ130S Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon P-Channel MOS FET

SMD Type
Silicon P-Channel MOS FET
2SJ130S
TransistIoCrs
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and
ultrasonic power oscillators
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation (Tc=25 )
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
-300
V
VGSS
20
V
ID(DS)
-1
A
ID(pulse)
-2
A
IDR
-1
A
Pch
20
W
Tch
150
Tstg
-55 to +150
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