2SD965K Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN epitaxial planar type

SMD Type
TransistIoCrs
Silicon NPN epitaxial planar type
2SD965K
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances at high efficiency with
the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
40
V
VCEO
20
V
VEBO
5
V
IC
3
A
ICP
7
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Collector-emitter cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Testconditons
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 10 V, IE = 0
ICEO VCE = 10 V, IB = 0
IEBO VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.5 A
hFE
VCE = 2 V, IC = 1 A
VCE(sat) IC = 2 A, IB = 0.1 A
Cob VCB = 20 V, IE = 0, f = 1 MHz
fT VCB = 6 V, IE = -50 mA, f = 200 MHz
hFE Classification
Rank
hFE
Q
230 380
R
340 600
Min Typ Max Unit
20
V
5
V
0.1
A
1
A
0.1
A
230
600
150
0.28 1.00 V
26 50 pF
150
MHz
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