2SD965-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD965-HF
Transistors
■ Features
● Low Collector-Emitter Saturation Voltage
● Large Collector Power Dissipation and Current
● Mini Power Type Package
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
40
20
7
5
750
167
150
-55 to 150
Unit
V
A
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 10 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=3 A, IB=100mA
VBE(sat) IC=3 A, IB=100mA
hFE(1) VCE= 2V, IC= 1mA
hFE(2) VCE= 2V, IC= 500mA
hFE(3) VCE= 2V, IC= 2A
Cob VCB= 20V, IE= 0,f=1MHz
fT
VCE= 6V, IC= 50mA,f=200MHz
Min Typ Max Unit
40
V
20
7
100 nA
100
1
V
1.2
200
230
950
150
50 pF
150
MHz
■ Classification of hfe(2)
Type
2SD965-Q-HF 2SD965-R-HF 2SD965-S-HF 2SD965-T-HF
Range
230-380
340-600
560-800
560-950
Marking
965Q F
965R F
965S F
965T F
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