2SD882-126_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
Transistors
NPN Transistors
2SD882
Features
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
TO-126
8.00± 0.30
ø3.20± 0.10
0.75± 0.10
1.60± 0.10
0.75± 0.10
12 3
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
40
V
VCEO
30
V
VEBO
6
V
IC
3
A
Pc
1
W
TJ
150
Tstg
-55 to 150
Unit:mm
3.25± 0.20
(1.00)
(0.50)
1.75± 0.20
0.50
+0.10
–0.05
1. Base
2. Collector
3. Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Testconditions
Ic=100uA ,IE=0
IC= 10 mA , IB=0
IE= 100 uA ,IC=0
VCB=40 V , IE=0
VCE=30 V , IB=0
VEB=6V , IC=0
VCE= 2V, IC= 1A
VCE=2V, IC= 100mA
IC=2A, IB= 0.2A
IC=2A, IB= 0.2A
VCE=5 V, IC=0.1mA,f = 10MHz
■ Classification of hfe(1)
Type
2SD882-R
Range
60-120
2SD882-Q
100-200
2SD882-P
160-320
2SD882-E
200-400
Min Typ Max Unit
40
V
30
V
6
V
1 uA
10 uA
1 uA
60
400
32
0.5 V
1.5 V
50
MHz
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