2SD875_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD875
Transistors
■ Features
● Large collector power dissipation PC.
● High collector to emitter voltage VCEO.
● Complimentary to 2SB767
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
80
VCEO
80
V
VEBO
5
IC
0.5
A
ICP
1
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 60V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=300 mA, IB=30mA
VBE(sat) IC=300 mA, IB=30mA
hFE(1) VCE= 10V, IC= 150mA
hFE(2) VCE= 5V, IC= 500mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IE= -50mA,f=200MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD875-R
130-220
XR
2SD875-S
185-330
XS
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
80
80
V
5
100
nA
100
0.2 0.4
V
0.85 1.2
130
330
50 100
11
pF
120
MHz
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