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2SD874_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors | |||
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SMD Type
NPN Transistors
2SD874
Transistors
â Features
â Low Collector-Emitter Saturation Voltage
â Large Collector Power Dissipation
â Mini Power Type Package
â Complimentary to 2SB766
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
â Absolute Maximum Ratings Ta = 25â
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Thermal Resistance From Junction To Ambient
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
RθJA
PC
TJ
Tstg
Rating
30
25
5
1
250
500
150
-55 to 150
Unit
V
A
â/W
mW
â
â Electrical Characteristics Ta = 25â
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μAï¼ IE= 0
VCEO Ic= 1 mAï¼ IB= 0
VEBO IE= 100μAï¼ IC= 0
ICBO VCB= 20 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500 mA, IB=50mA
VBE(sat) IC=500 mA, IB=50mA
hFE(1) VCE= 10V, IC= 500mA
hFE(2) VCE= 5V, IC= 1A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 50mA,f=200MHz
â Classification of hfe(1)
Type
Range
Marking
2SD874-Q
85-170
ZQ
2SD874-R
120-240
ZR
2SD874-S
170-340
ZS
Min Typ Max Unit
30
25
V
5
100
nA
100
0.4
V
1.2
85
340
50
20 pF
200
MHz
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