2SD874A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD874A
Transistors
■ Features
● Large collector power dissipation PC
● Low collector-emitter saturation voltage VCE(sat)
● Complimentary to 2SB766A
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
60
VCEO
50
V
VEBO
5
IC
1
A
PC
500
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 2 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 50 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500 mA, IB=50mA
VBE(sat) IC=500 mA, IB=50mA
hFE(1) VCE= 10V, IC= 500mA
hFE(2) VCE= 5V, IC= 1A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 50mA,f=200MHz
■ Classification of hfe(1)
Type
2SD874A-Q
Range
85-170
Marking
YQ
2SD874A-R
120-240
YR
2SD874A-S
170-340
YS
Min Typ Max Unit
60
50
V
5
100
nA
100
0.4
V
1.2
85
340
50
20
pF
200
MHz
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