2SD814A-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD814A-HF
Transistors
■ Features
● High collector to emitter voltage VCEO.
● Low noise voltage NV.
● Complimentary to 2SB792A-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
185
VCEO
185
V
VEBO
5
IC
50
mA
Icp
100
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise voltage
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 120 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=30 mA, IB=3mA
VBE(sat) IC=30 mA, IB=3mA
hFE VCE= 5V, IC= 10mA
NV
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kW, Function = FLAT
Cob VCB= 10V, IE= 0,f=1MHz
fT VCE= 10V, IE= -10mA,f=200MHz
■ Classification of hfe
Type
Range
Marking
2SD814A-Q-HF 2SD814A-R-HF 2SD814A-S-HF
90-155
130-220
185-330
LQ F
LR F
LS F
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Min Typ Max Unit
185
185
V
5
100
nA
100
1
V
1.2
90
330
150
mV
2.3
pF
150
MHz
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