2SD814 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SD814,2SD814A
Features
High collector-emitter voltage VCEO
Low noise voltage NV
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD814
150
V
VCBO
2SD814A
185
V
Collector-emitter voltage
2SD814
150
V
VCEO
2SD814A
185
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff current
Collector-emitter voltage
2SD814
2SD814A
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
hFE Classification
Marking
2SD814
2SD814A
Rank
hFE
PQ
LQ
Q
90 155
Symbol
Testconditons
ICBO VCB = 100 V, IE = 0
VCEO IC = 100 ìA, IB = 0
VEBO IE = 10 ìA, IC = 0
hFE VCE = 5 V, IC = 10 mA
VCE(sat) IC = 30 mA, IB = 3 mA
fT VCE = 10 V, IC = -10 mA, f = 200 MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
NV ^{VCE = 10 V, IC = 1 mA, GV = 80 dB}
Rg = 100 k? , Function = FLAT
PR
LR
R
130 220
PS
LS
S
185 330
Min Typ Max Unit
1 ìA
150
V
185
V
5
V
90
330
1
V
150
MHz
2.3
pF
150
mV
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