2SD780A_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD780A
Transistors
■ Features
● High DC current gain
● Complimentary to 2SB736A
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
80
VCEO
80
V
VEBO
5
IC
300
mA
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Base - emitter voltage (Note.1)
DC current gain
(Note.1)
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 70 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=300 mA, IB=30mA
VBE(sat) IC=300 mA, IB=30mA
VBE VCE= 6V, IC=10mA
hFE(1) VCE= 1V, IC= 50mA
hFE(2) VCE= 2V, IC= 300mA
Cob VCB= 6V, IE=0,f=1MHz
fT
VCE= 6V, IE= -10mA
Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
Min Typ Max Unit
80
80
V
5
0.1
uA
0.1
0.15 0.6
V
1.2
600 645 700 ^mV
110 200 400
30
7
pF
140
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD780A-D51
110-180
D51
2SD780A-D52
135-220
D52
2SD780A-D53
170-270
D53
2SD780A-D54
200-320
D54
2SD780A-D55
250-400
D55
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