2SD780A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Epitaxia

SMD Type
TransistIoCrs
NPN Silicon Epitaxia
2SD780A
Features
Micro package.
High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation at 25
ambient temperature
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
80
V
VCEO
80
V
VEBO
5.0
V
IC
300
A
PT
200
W
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base to emitter voltage *
Collector saturation voltage *
Output capacitance
Gain bandwidth product
* Pulsed: PW 350 ìs, duty cycle 2%
hFE Classification
Marking
hFE
D51
110 180
D52
135 220
Symbol
Testconditons
ICBO VCB = 50 V, IE = 0
IEBO VEB = 5.0 V, IC = 0
hFE VCE = 1.0 V, IC = 50 mA
VBE VCE = 6.0 V, IC = 10 mA
VCE(sat) IC = 300 mA, IB = 30 mA
Cob VCB = 6.0 V, IE = 0 , f = 1.0 MHz
fT VCE = 6.0 V, IE = -10 mA
Min Typ Max Unit
100 nA
100 nA
110 200 400
600 645 700 mV
0.15 0.6 V
7.0
pF
140
MHz
D53
170 270
D54
200 320
D55
250 400
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