2SD602A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD602A
Transistors
■ Features
● Low Collector to Emitter Saturation Voltage
● Mini Type Package
● Complimentary to 2SB710A
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
Tstg
Rating
60
50
5
500
200
625
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
Ic= 100 μA， IE= 0
Ic= 10 mA， IB= 0
IE= 100μA， IC= 0
VCB= 50 V , IE= 0
VEB= 5V , IC=0
IC=300 mA, IB=30mA
Base - emitter saturation voltage (Note.1)
VBE(sat) IC=300 mA, IB=30mA
DC current gain
Collector output capacitance
Transition frequency
(Note.1)
hFE(1)
hFE(2)
Cob
fT
VCE= 10V, IC= 150mA
VCE= 10V, IC= 500mA
VCB= 10V, IE=0,f=1MHz
VCE= 10V, IC= 50mA,f=200MHz
Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
Range
Marking
2SD602A-Q
85-170
XQ
2SD602A-R
120-240
XR
2SD602A-S
170-340
XS
1.Base
2.Emitter
3.collector
Min Typ Max Unit
60
50
V
5
0.1
uA
0.1
0.6
V
1.2
85
340
40
15 pF
200
MHz
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