2SD602A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial Planar Type

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SD602A
Features
Low collector to emitter saturation voltage VCE(sat).
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
60
V
VEBO
5
V
IC
500
mA
ICP
1
A
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = 10 ìA, IE = 0
VCEO IC = 10 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 20 V, IE = 0
hFE VCE = 10 V, IC = 150 mA
VCE(sat) IC = 300 mA, IB = 30 mA
fT VCB = 10 V, IE = -50 mA , f = 200 MHz
Cob VCB = 10V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
60
V
50
V
5
V
0.1 ìA
85 160 340
0.35 0.6 V
200
MHz
6 15 pF
hFE Classification
Marking
hFE
XQ
85 170
XR
120 240
XS
170 340
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