2SD601A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD601A
Transistors
■ Features
● High hFE
● Low VCE(sat)
● For general amplification
● Complimentary to 2SB709A
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
Tstg
Rating
60
50
7
100
200
625
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 2 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 50 V , IE= 0
ICEO VCE= 30 V , IB= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=100 mA, IB=10mA
VBE(sat) IC=100 mA, IB=10mA
hFE(1) VCE= 2V, IC= 100mA
hFE(2) VCE= 10V, IC= 2mA
Cob VCB= 10V, IE=0,f=1MHz
fT
VCE= 10V, IC= 2mA,f=200MHz
■ Classification of hfe(2)
Type
Range
Marking
2SD601A-Q
160-260
ZQ
2SD601A-R
210-340
ZR
2SD601A-S
290-460
ZS
Min Typ Max Unit
60
50
V
7
0.1
100 uA
0.1
0.3
V
1.2
90
160
460
3.5
pF
150
MHz
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