2SD596_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD596
Transistors
■ Features
● High DC Current gain.
● Complimentary to 2SB624
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
30
VCEO
25
V
VEBO
5
IC
700
mA
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Base - emitter voltage
(Note.1)
DC current gain
(Note.1)
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 30 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=700 mA, IB=70mA
VBE(sat) IC=700 mA, IB=70mA
VBE VCE= 6V, IC= 10mA
hFE(1) VCE= 1V, IC= 100mA
hFE(2) VCE= 1V, IC= 700mA
Cob VCB= 6V, IE= 10mA , f=10MHz
fT
VCE= 6V, IC= 10mA
Min Typ Max Unit
30
25
V
5
100
nA
100
0.6
1.2 V
0.6
0.7
110
400
50
12
pF
170
MHz
Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
Range
2SD596-DV1
110-180
2SD596-DV2
135-220
2SD596-DV3
170-270
Marking
DV1
DV2
DV3
2SD596-DV4 2SD596-DV5
200-320
250-400
DV4
DV5
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