2SD2537_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2537
Transistors
■ Features
● High DC current gain.
● High emitter-base voltage.
● Low saturation voltage.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: Single pulse Pw=10ms
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
30
VCEO
25
V
VEBO
9
IC
1.2
A
ICP
2
0.5
PC
W
2
TJ
150
℃
Tstg
-55 to 150
Symbol
Test Conditions
Min
VCBO Ic= 100 μA， IE= 0
30
VCEO Ic= 1 mA， IB= 0
25
VEBO IE= 100μA， IC= 0
9
ICBO VCB= 30 V , IE= 0
IEBO VEB= 9 V , IC=0
VCE(sat) IC=500 mA, IB=10mA
VBE(sat) IC=500 mA, IB=10mA
hFE VCE= 5V, IC= 500 mA
820
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IE= -50mA,f=100MHz
Typ Max Unit
V
0.3
uA
0.3
0.3
V
1.2
2700
20
pF
200
MHz
■ Classification of hfe
Type
2SD2537-V
Range
820-1800
Marking
DV
2SD2537-W
1200-2700
DW
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