2SD2537 Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor (25V, 1.2A)

SMD Type
Medium Power Transistor
2SD2537
Transistors
Features
High DC current gain.
High emitter-base voltage.
Low saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
12
V
IC
1.2
A
PC
2
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
hFE Classification
Marking
DV
Rank
hFE
V
W
820 1800 1200 2700
Symbol
Testconditons
BVCBO IC=10ìA
BVCEO IC=1mA
BVEBO IE=10ìA
ICBO VCB=30V
IEBO VEB=12V
VCE(sat) IC=500mA, IB=10mA
hFE VCE=5V, IC=0.5A
fT VCE=10V, IE= -50mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
Min Typ Max Unit
30
V
25
V
12
V
0.3 ìA
0.3 ìA
0.3 V
820
2700
200
MHz
20
pF
www.kexin.com.cn ¹