2SD2457_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2457
Transistors
■ Features
● High collector to emitter voltage VCEO.
● Large collector power dissipation PC.
● Complementary to 2SB1599
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
50
VCEO
40
V
VEBO
5
IC
1.5
A
ICP
3
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 1 mA， IE= 0
VCEO Ic= 2 mA， IB= 0
VEBO IE= 1 mA， IC= 0
ICBO VCB= 50 V , IE= 0
ICEO VCE= 40 V , IB= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1.5 A, IB=150mA
VBE(sat) IC=2 A, IB=200mA
hFE VCE= 5V, IC= 1 A
Cob VCB=20V, IE=0, f=1MHz
fT VCE=5V,IE=-500mA,f=200MHz
Min Typ Max Unit
50
40
V
5
1
10 uA
0.1
1
V
1.5
80
220
45
pF
150
MHz
■ Classification of hfe
Type
Range
Marking
2SD2457-Q
80-160
1YQ
2SD2457-R
120-220
1YR
www.kexin.com.cn ¹