2SD2453 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type
2SD2453
Features
High forward current transfer ratio hFE.
Low collector-emitter saturation voltage VCE(sat).
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Collector power dissipation
Ta = 25
Tc = 25
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
80
V
VCEO
60
V
VEBO
6
V
IC
2
A
ICP
4
A
IB
1
A
1
W
PC
10
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-base cutoff curent
Collector cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
Testconditons
VCEO IC = 25mA, IB = 0
ICBO VCB = 80 V,IE = 0
ICEO VCE = 40 V,IB = 0
IEBO VEB = 6 V, IC = 0
hFE VCE = 4 V, IC = 0.5 A
VCE(sat) IC = 2 A, IB = 0.05 A
fT VCE = 12 V, IC = 0.2 A , f = 10 MHz
Min Typ Max Unit
60
V
100 ìA
100 ìA
100 ìA
500
2500
1
V
50
MHz
hFE Classification
Rank
hFE
Q
500 1000
R
800 1500
S
1200 2500
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