2SD2414 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)

SMD Type
Transistors
Silicon NPN Triple Diffused Type
2SD2414
Features
Low Saturation Voltage:VCE(sat)=0.5V(Max.)(at IC=4A)
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
100
V
VCEO
80
V
VEBO
5
V
IC
7
A
IB
1
A
1.5
W
PC
TC=25
40
W
Tj
150
Tstg
-55 to +125
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