2SD2403_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2403
Transistors
■ Features
● High current capacitance
● Low collector saturation voltage
● Complementary to 2SB1572
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
80
60
6
3
5
2
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 uA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100 uA， IC= 0
Collector-base cut-off current
ICBO VCB= 80 V , IE= 0
Emitter cut-off current
IEBO VEB= 6V , IC=0
Collector-emitter saturation voltage
IC=2 A, IB=100mA
VCE(sat)
IC=3 A, IB=150mA
Base - emitter saturation voltage
VBE(sat) IC=2 A, IB=100mA
Base - emitter voltage
VBE VCE= 2V, IC= 100mA
DC current gain
VCE= 2V, IC= 100m A
hFE
VCE= 2V, IC= 1 A
Turn-on time
Storage time
Fall time
ton
IC = 1 A, VCC= 10 V
tstg IB1 = −IB2 = 0.1 A
tf
RL = 5 Ω
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Transition frequency
fT
VCE=10V,IE=-300mA
■ Classification of hfe(2)
Type
2SD2403-X
Range
100-200
Marking
GX
2SD2403-Y
160-320
GY
2SD2403-Z
200-400
GZ
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
80
60
V
6
0.1
uA
0.1
0.15 0.3
0.21 0.5
V
0.89 1.2
0.6
0.7
80
100
400
150
652
ns
40
30
pF
130
MHz
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