2SD2402_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2402
Transistors
■ Features
● High current capacitance
● Low collector saturation voltage
● Complementary to 2SB1571
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
50
Collector - Emitter Voltage
VCEO
30
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
IC
5
Collector Current - Pulse
ICP
8
Collector Power Dissipation
PC
2
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 uA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100 uA， IC= 0
Collector-base cut-off current
ICBO VCB= 50 V , IE= 0
Emitter cut-off current
IEBO VEB= 6V , IC=0
Collector-emitter saturation voltage
IC=3 A, IB=150mA
VCE(sat)
IC=5 A, IB=250mA
Base - emitter saturation voltage
VBE(sat) IC=3 A, IB=150mA
Base - emitter voltage
VBE VCE= 1V, IC= 100mA
DC current gain
VCE= 1V, IC= 1 A
hFE
VCE= 1V, IC= 2 A
Turn-on time
Storage time
Fall time
ton
IC = 2.0 A, VCC= 10 V
tstg IB1 = −IB2 = 0.1 A
tf
RL = 500 Ω
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Transition frequency
■ Classification of hfe(2)
fT
VCE=10V,IE=-500mA,f=1MHz
Type
2SD2402-X
2SD2402-Y
2SD2402-Z
Range
100-200
160-320
200-400
Marking
EX
EY
EZ
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
50
30
V
6
0.1
uA
0.1
0.14 0.3
0.23 0.5
V
0.88 1.2
0.6
0.7
80
100
400
275
485
ns
45
60
pF
170
MHz
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