2SD2402 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

SMD Type
NPN Silicon Epitaxia
2SD2402
Transistors
Features
High current capacitance.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Base current
Base current (pulse) *
Total power dissipation
Junction temperature
Storage temperature
* PW 10 ms, duty cycle 50 %
Symbol
Rating
Unit
VCBO
50
V
VCEO
30
V
VEBO
6
V
IC
5
A
ICP
8
A
IB
0.2
A
IBP
0.4
A
PT
2
W
Tj
150
Tstg
-55 to +150
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