2SD2391_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2391
Transistors
■ Features
● Low saturation voltage
● Collector-emitter voltage =60V
● Pc = 2W (on 40X40X0.7mm ceramic board).
● Complements the 2SB1561.
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
(Note.2)
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
60
VCEO
60
V
VEBO
6
IC
2
A
ICP
6
0.5
PC
W
2
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 50 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1 A, IB=50mA
VBE(sat) IC=1 A, IB=50mA
hFE(1) VCE= 2V, IC= 500mA
hFE(2) VCE= 2V, IC= 1.5A
Cob VCB= 10V, IE= 0,f=1MHz
fT VCE= 2V, IE= -500mA,f=100MHz
Min Typ Max Unit
60
60
V
6
100
nA
100
0.35
V
1.2
82
390
45
21
pF
210
MHz
■ Classification of hfe(1)
Type
2SD2391-P
Range
82-180
Marking
DTP*
2SD2391-Q
120-270
DTQ*
2SD2391-R
180-390
DTR*
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