2SD2357_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2357
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
● Large collector power dissipation PC.
● Complementary to 2SB1537
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
10
VCEO
10
V
VEBO
5
IC
1
A
ICP
1.2
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100u A， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100u A， IC= 0
ICBO VCB= 7 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=500mA, IB=5mA
VBE(sat) IC=500mA, IB=5mA
hFE VCE= 2V, IC= 100mA
Cob VCB=5V, IE=0, f=1MHz
fT
VCE=5V,IE=-50mA,f=200MHz
Min Typ Max Unit
10
10
V
5
1
uA
0.1
0.15
V
1.2
200
800
30
pF
120
MHz
■ Marking
Marking
1M
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