2SD2357 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD2357
Features
Low collector-emitter saturation voltage VCE(sat).
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
10
V
VCEO
10
V
VEBO
5
V
IC
1.2
A
ICP
1
A
PC
1
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Marking
Marking
1M
Symbol
Testconditons
ICBO VCB = 7 V, IE = 0
VCBO IC = 10 ìA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
hFE VCE = 2 V, IC = 100 mA
VCE(sat) IC = 500 mA, IB = 5 mA
fT VCB = 5 V, IE = -50 mA, f = 200 MHz
Cob VCB = 5 V, IE = 0, f = 1 MHz
Min Typ Max Unit
1 ìA
10
V
10
V
5
V
200
800
0.15 V
120
MHz
30
pF
www.kexin.com.cn ¹