2SD2351 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – General Purpose Transistor

SMD Type
TransistIoCrs
General Purpose Transistor
2SD2351
Features
High DC current gain.
High emitter-base voltage. (VCBO=12V)
Low saturation voltage.
(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
60
50
12
0.15
0.2
0.2
150
-55 to +150
Unit
V
V
V
A(DC)
A(Pulse)*
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
Testconditons
BVCBO IC=10ìA
BVCEO IC=1mA
BVEBO IE=10ìA
ICBO VCB=50V
IEBO VEB=12V
VCE(sat) IC/IB=50mA/5mA
hFE VCE/IC=5V/1mA
fT VCE=5V, IE=-10mA, f=100MHz
Cob VCB=5V, IE=0A, f=1MHz
Min Typ Max Unit
60
V
50
V
12
V
0.3 ìA
0.3 ìA
0.3 V
820
2700
250
MHz
3.5
pF
hFE Classification
Marking
hFE
BJV
820 1800
BJW
1200 2700
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