2SD2230 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

SMD Type
TransistIoCrs
NPN Silicon Epitaxia
2SD2230
Features
High hFE and high current.
Low VCE(sat).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current(dc)
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
16
V
VCEO
16
V
VEBO
5
V
ID
500
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base to emitter voltage *
Collector saturation voltage
Output capacitance
Gain bandwidth product
* Pulsed: PW 350 µs, duty cycle 2%
Marking
Marking
D46
Symbol
Testconditons
ICBO VCB = 16 V, IE = 0
IEBO VEB = 6.0 V, IC = 0
hFE 1 VCE = 1.0 V, IC = 100 mA
hFE 2 VCE = 1.0 V, IC = 500 mA
VBE VCE = 1.0 V, IC = 10 mA
VCE(sat) 1 IC = 100 mA, IB = 10 mA
VCE(sat) 2 IC = 500 mA, IB = 20 mA
Cob VCB = 10 V, IE = 0 , f = 1.0 MHz
fT VCE = 1.0 V, IE = -100 mA
Min Typ Max Unit
100 nA
100 nA
200
200
550
700 mV
33 50 mV
150 200 mV
15 pF
50
MHz
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