2SD2185 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD2185
Features
Low collector-emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
hFE Classification
Marking
Rank
hFE
1H
R
S
120 240
170 340
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
3
A
ICP
4
A
PC
1
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
VCBO IC = 10 ìA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 20 V, IE = 0
VCE = 2 V, IC = 200 mA
hFE
VCE = 2 V, IC = 1.0 A
VCE(sat) IC = 1 A, IB = 50 mA
VBE(sat) IC = 1 A, IB = 50 mA
fT VCB = 10 V, IE = -50 mA, f = 200 MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
50
V
50
V
5
V
0.1 ìA
120
340
80
0.15 0.3 V
0.85 1.2 V
120
MHz
20 35 pF
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