2SD2170_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2170
Transistors
■ Features
● Built-in zener diode between collector and base.
● Zener diode has low dispersion.
● Darlington connection for high DC current gain.
● Built-in resistor between base and emitter.
C
1.70 0.1
0.42 0.1
0.46 0.1
B
R1
R2
E
R1 3.5kΩ
R2 300 Ω
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
80
Collector - Emitter Voltage
VCEO
80
V
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
Collector Current - Pulse
IC
2
A
ICP
3
Collector Power Dissipation
(Note.1)
PC
0.5
W
2
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: Single pulse Pw=10ms,Duty=1/2
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 70 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1 A, IB=1mA
hFE VCE= 2V, IC= 1 A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IE= -100mA,f=30MHz
Min
80
80
6
1000
Typ Max Unit
V
10 uA
3 mA
1.5 V
10000
25
pF
80
MHz
■ Marking
Marking
DM
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