2SD2153_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2153
Transistors
■ Features
● Low saturation voltage,
typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA
● Excellent DC current gain characteristics.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
(Note.2)
Symbol
Rating
Unit
VCBO
30
VCEO
25
V
VEBO
6
IC
2
A
ICP
3
0.5
PC
W
2
TJ
150
℃
Tstg
-55 to 150
Note.1: Single pulse, Pw=10ms
Note.2: Mounted on a 40 X40X t0.7mm Ceramic substrate
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 20 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1 A, IB=20mA
VBE(sat) IC=1 A, IB=20mA
hFE VCE= 6V, IC= 500mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IE= -10mA,f=100MHz
■ Classification of hfe
Type
2SD2153-U
Range
560-1200
Marking
DNU*
2SD2153-V
820-1800
DNV*
2SD2153-W
1200-2700
DNW*
Min Typ Max Unit
30
25
V
6
0.5
uA
0.5
0.5
V
1.2
560
2700
22
pF
110
MHz
www.kexin.com.cn ¹