2SD2150_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2150
Transistors
■ Features
● Excellent current-to-gain characteristics
● Low collector saturation voltage VCE(sat)
● Complementary to 2SB1412
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
40
VCEO
20
V
VEBO
6
IC
3
A
PC
500
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100u A， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100u A， IC= 0
ICBO VCB= 35 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=2 A, IB=100mA
VBE(sat) IC=2 A, IB=100mA
hFE VCE= 2V, IC= 100mA
Cob VCB=10V, IE=0, f=1MHz
fT VCE=2V,IC=500mA,f=100MHz
■ Classification of hfe
Type
Range
Marking
2SD2150-R
180-390
CF R*
2SD2150-S
270-560
CF S*
Min Typ Max Unit
40
20
V
6
0.1
uA
0.1
0.5
V
1.2
180
560
25
pF
290
MHz
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