2SD2122S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial

SMD Type
Features
Transistors
Silicon NPN Epitaxial
2SD2122S
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
*1 . Value at TC = 25
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
*Pulse test
hFE Classification
Rank
hFE
B
60 to 120
C
100 to 200
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
180
V
VCEO
120
V
VEBO
5
V
IC
1.5
A
IC(peak)
3
A
PC*1
18
A
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE
fT
Cob
Testconditons
IC = 1 mA, IE = 0
IC = 10 mA, RBE =
IE= 1 mA, IC = 0
VCB = 160 V, IE = 0
VCE = 5 V, IC = 150 mA*
VCE = 5 V, IC = 500 mA*
IC= 500 mA,IB = 50 mA*
VCE = 5 V, IC = 150 mA*
VCE = 5 V, IC = 150 mA*
VCB = 10 V, IE = 0,f = 1 MHz
Min Typ Max Unit
180
V
120
V
5
V
10 ìA
60
200
A
30
1
V
1.5 V
180
MHz
14
pF
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