2SD2121_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
■ Features
● Low frequency power amplifier
● Complementary to 2SB1407
NPN Transistors
2SD2121
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
Transistors
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
35
35
V
5
2.5
A
3
18
W
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= 1 mA， IE= 0
VCEO Ic= 10 mA， RBE= ∞
VEBO IE= 1 mA， IC= 0
ICBO VCB= 35 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=2 A, IB=200mA
VBE(sat) IC=2 A, IB=200mA
VBE VCE= 2V, IC= 1.5 A
VCE= 2 V, IC= 500mA
hFE
VCE= 2V, IC= 1.5 A
■ Classification of hfe(1)
Type
Range
2SD2121-B
60-120
2SD2121-C
100-200
2SD2121-D
160-320
Min Typ Max Unit
35
35
V
5
20
uA
0.1
1
1.2 V
1.5
60
320
20
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