2SD2115S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial

SMD Type
Features
Low frequency power amplifier.
Transistors
Silicon NPN Epitaxial
2SD2115S
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
150
V
VCEO
60
V
VEBO
5
V
IC
2
A
ICP
2.5
A
PC
18
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Fall time
Symbol
Testconditons
V(BR)CBO IC = 1 mA, IE = 0
V(BR)CEO IC = 10 mA, RBE =
V(BR)EBO IE = 1 mA, IC = 0
ICBO VCB = 100 V, IE = 0
hFE VCE = 5 V,IC = 1.5 A
VCE(sat) IC = 1.5 A,IB = 0.05 A
VBE(sat) IC = 1.5 A,IB = 0.05 A
tf IC = 1.5 A,IB = -IB2 =50 mA
Min Typ Max Unit
150
V
60
V
5
V
10 ìA
150
0.8 V
1.3 V
0.6 ìs
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