2SD2114K Datasheet, PDF (1/1 Pages) Rohm – High-current Gain MediumPower Transistor (20V, 0.5A)

SMD Type
TransistIoCrs
Power Transistor
2SD2114K
Features
High DC current gain.
High emitter-base voltage.
Low VCE (sat).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance *
Transition frequency
Output On-resistance
* Measured using pulse current.
hFE Classification
Marking
Rank
hFE
BB
V
W
820 1800 1200 2700
Symbol
Rating
Unit
VCBO
25
V
VCEO
20
V
VEBO
12
V
0.5
IC
A
1*
PC
0.2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC=10ìA
BVCEO IC=1mA
BVEBO IE=10ìA
ICBO VCB=20V
IEBO VEB=10V
VCE(sat) IC/IB=500mA/20mA
hFE VCE=3V, IC=10mA
fT VCE=10V, IE= -50mA, f=100MHz
Cob VCB=10V, IE=0, f=1MHz
Ron IB=1mA, Vi=100mV(rms), f=1kHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
25
V
20
V
12
V
0.5 ìA
0.5 ìA
0.18 0.4 V
820
2700
350
MHz
8.0
pF
0.8
Ù
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