2SD2100_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD2100
Transistors
■ Features
● Low saturation voltage
● Large current cappacity
● Complementary to 2SB1397
Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Collector
RBE
Emitter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
1.70 0.1
0.42 0.1
0.46 0.1
Rating
Unit
25
20
V
6
2
A
4
1.3
W
150
℃
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Diode Forward voltage
Base to emitter resistance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100 uA， IC= 0
ICBO VCB= 20 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1 A, IB=50mA
VBE(sat) IC=1 A, IB=50mA
VCE= 2V, IC= 500mA
hFE
VCE= 2V, IC= 2 A
VF IF=500mA
RBE
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 2V, IC= 500 mA
■ Marking
Marking
DP
Min Typ Max Unit
25
20
V
6
1
uA
0.1
0.25 0.5
V
1.5
70
50
1.5 V
1.6
kΩ
25
pF
200
MHz
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