2SD2099 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD2099
Features
Contains input resistance (R1), base-to-emitter
resistance (RBE).
Contains diode between collector and emitter.
Low saturation voltage.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
40
V
VCEO
30
V
VEBO
6
V
IC
3
A
ICP
5
A
PC
1.5
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter on state voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Base resistance
Symbol
Testconditons
IcBO VCB = 30V , IE = 0
VCE = 2V , IC = 0.5A
hFE
VCE = 2V , IC = 2A
fT VCE = 2V , IC = 0.5A
Cob VCB = 10V , f = 1MHz
VCE(sat) IC = 1A , IB = 50mA
VBE(ON) VCE = 2V , IC = 1A
V(BR)CBO IC = 10ìA , IE = 0
IC = 10ìA , RBE =
V(BR)CEO
IC = 10mA , RBE =
VF IF = 0.5A
RBE
R1
Marking
Marking
DL
Min Typ Max Unit
1.0 ìA
70
50
100
MHz
40
pF
0.12 0.3 V
0.7 1.5 4.0 V
40
V
40
V
30
1.5 V
0.8
kÙ
60 90 120 Ù
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