2SD2098 Datasheet, PDF (1/1 Pages) Rohm – Low VCE(sat) Transistor(Strobe flash)

SMD Type
Low VCE(sat) Transistor
Features
Low VCE(sat).
Excellent DC current gain characteristics.
NPN silicon transistor.
2SD2098
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 3
0.48+0.1
-0.1
0.53+0.1
-0.1
Transistors
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
20
V
VEBO
6
V
IC
5
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
1. Base
2. Collector
3. Emiitter
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=40V
IEBO VEB=5V
VCE(sat) IC=4 A, IB=0.1A
hFE VCE=2V, IC=0.5A
fT VCE=6V, IE= -50mA, f=100MHz
Cob VCB=20V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
DJ
Q
R
120 270
180 390
Min Typ Max Unit
50
V
20
V
6
V
0.5 ìA
0.5 ìA
0.3 1.0 V
120
390
150
MHz
30
pF
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