2SD2028 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Low-Frequency Power Amp Applications

SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SD2028
Features
With Zener diode (11±3V) between collector and base.
Large current capacity.
Low collector-to-emitter saturation voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage, With Zener diode (11±3V)
VCBO
8
V
Collector-emitter voltage, With Zener diode (11±3V)
VCEO
8
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.7
A
Collector current (pulse)
ICP
1.5
A
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Testconditons
IcBO VCB = 6V , IE = 0
IEBO VEB = 4V , IC = 0
hFE VCE = 2V , IC = 50mA
fT VCE = 2V , IC = 50mA
Cob VCB = 5V , f = 1MHz
VCE(sat) IC = 100mA , IB = 10mA
VBE(sat) IC = 100mA , IB = 10mA
V(BR)CBO IC = 100ìA , IE = 0
V(BR)CEO ^{IC = 100ìA , RBE =}
V(BR)EBO ^{IE = 10ìA , IC = 0}
Min Typ Max Unit
100 nA
100 nA
200
900
200
MHz
12
pF
50 120 mV
0.8 1.2 V
8 11 14 V
8 11 14 V
5
V
hFE Classification
Marking
Rank
hFE
6
200 400
LT
7
300 600
8
450 900
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