2SD1998_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1998
Transistors
■ Features
● Low saturation voltage.
● Large current capacity.
● Complementary to 2SB1324
Collector
1.70 0.1
0.42 0.1
0.46 0.1
Base
RBE
Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
40
VCEO
30
V
VEBO
6
IC
3
A
ICP
5
PC
1.5
W
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Diode forwad voltage
Base-to-emitter resistance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 30 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=2 A, IB=100mA
VBE(sat) IC=2 A, IB=100mA
hFE(1) VCE= 2V, IC= 500mA
hFE(2) VCE= 2V, IC= 2 A
VF IF=0.5A
RBE
Cob VCB= 10V, f=1MHz
fT
VCE= 2V, IC= 500mA
Min Typ Max Unit
40
30
V
6
1
uA
0.1
0.5
V
1.5
70
50
1.5 V
0.8
KΩ
40
pF
100
MHz
■ Marking
Marking
DM
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