2SD1998 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1998
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between collector and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
40
V
VCEO
30
V
VEBO
6
V
IC
3
A
ICP
5
A
PC
1.5
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Marking
Marking
DM
Symbol
Testconditons
IcBO VCB = 30V , IE = 0
VCE = 2V , IC = 0.5A
hFE
VCE = 2V , IC = 2A
fT VCE = 2V , IC = 0.5A
Cob VCB = 10V , f = 1MHz
VCE(sat) IC = 2A , IB = 100mA
VBE(sat) IC = 2V , IB = 100mA
V(BR)CBO IC = 10ìA , IE = 0
IC = 10ìA , RBE =
V(BR)CEO
IC = 10mA , RBE =
VF IF = 0.5A
RBE
Min Typ Max Unit
1.0 ìA
70
50
100
MHz
40
pF
0.2 0.5 V
1.5 V
40
V
40
V
30
1.5 V
0.8
kÙ
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