2SD1997_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1997
Transistors
■ Features
● Low saturation voltage.
● Large current capacity.
● Complementary to 2SB1323
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-to-emitter on state voltage
DC current gain
Diode forwad voltage
Base-to-emitter resistance
Base resistance
Collector output capacitance
Transition frequency
■ Marking
Marking
DO
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
40
30
6
3
5
1.5
150
-55 to 150
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 30 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1 A, IB=50mA
VBE(sat) IC=1 A, IB=50mA
VBE(on) VCE= 2V, IC= 1 A
hFE(1) VCE= 2V, IC= 500mA
hFE(2) VCE= 2V, IC= 2 A
VF IF=0.5A
RBE
R1
Cob VCB= 10V, f=10MHz
fT
VCE= 2V, IC= 500mA
Unit
V
A
W
℃
Min Typ Max Unit
40
30
V
6
1
uA
0.1
0.3
1.2 V
1
5
70
50
1.5 V
0.8
KΩ
120
200 Ω
40
pF
100
MHz
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